CPH6621 no. a0847-1/4 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0847 CPH6621 p-channel silicon mosfet general-purpose switching device applications sanyo semiconductors d ata sheet features low on-resistance. 2.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss - -20 v gate-to-source voltage v gss 10 v drain current (dc) i d - -1.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% --6.0 a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0.9 w t otal power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1.2 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.3 v forward transfer admittance ? yfs ? v ds =--10v, i d =--0.8a 1.38 2.3 s static drain-to-source on-state resistance r ds (on)1 i d =--0.8a, v gs =--4v 180 235 m ? r ds (on)2 i d =--0.4a, v gs =--2.5v 240 340 m ? input capacitance ciss v ds =--10v, f=1mhz 290 pf output capacitance coss v ds =--10v, f=1mhz 40 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 25 pf marking : wh continued on next page. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 60607pe ti imtc-00000748
CPH6621 no. a0847-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 35 ns t urn-off delay time t d (off) see specified test circuit. 32 ns fall time t f see specified test circuit. 27 ns t otal gate charge qg v ds =--10v, v gs =- -4v, i d =--1.5a 3.2 nc gate-to-source charge qgs v ds =--10v, v gs =- -4v, i d =--1.5a 0.8 nc gate-to-drain ?iller?charge qgd v ds =--10v, v gs =- -4v, i d =--1.5a 0.6 nc diode forward voltage v sd i s =--1.5a, v gs =0v --0.87 --1.5 v package dimensions electrical connection unit : mm (typ) 7018a-010 switching time test circuit 1 : gate1 2 : source2 3 : gate2 4 : drain2 5 : source1 6 : drain1 sanyo : cph6 3 2 1 64 5 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 pw=10 s d.c. 1% p. g 50 ? g s d i d = --0.8a r l =12.5 ? v dd = --10v v out CPH6621 v in 0v - -4v v in 0 0 -- 0 . 2 -- 0 . 4 -- 1 . 0 -- 1 . 2 -- 1 . 4 -- 2 . 0 -- 1 . 6 -- 1 . 8 -- 0 . 2 -- 0 . 8 -- 0 . 6 0 - -0.2 - -0.4 - -1.0 - -1.2 - -1.4 - -2.0 - -1.6 - -1.8 - -0.8 - -0.6 - -0.5 --1.0 -- 0 . 8 - -0.9 -- 0 . 1 -- 0 .3 --0.4 --0.6 --0.7 v gs = --1.5v - -6.0v - -2.0v -- 3 . 0v - -2.5v it02654 - -4.0v 0--0 .5 --1.0 --1.5 --2.0 --2.5 v ds = --10v 25 c - -25 c t a=75 c it02655 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 654 123 1 : gate1 2 : source2 3 : gate2 4 : drain2 5 : source1 6 : drain1 t op view
CPH6621 no. a0847-3/4 it02659 0- -0.6 - -0.4 - -0.2 --0.8 --1.0 --1.2 --1.4 - -0.01 - -10 - -1.0 - -0.1 7 7 5 5 3 3 2 2 7 5 3 2 v gs =0v -- 2 5 c 25 c ta=75 c 0 10 -- 5 100 1000 7 5 3 2 7 5 3 2 - -20 - -10 --15 f=1mhz ciss coss crss it02661 it02658 - -0.01 0.1 - -0.1 23 57 - -1.0 23 57 23 10 1.0 7 5 3 2 7 5 3 2 v ds = --10v 75 c 25 c t a= --25 c ? y fs ? -- i d drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v it02660 0 0 -- 1 -- 2 -- 3 -- 4 3 3.5 12 2.5 0.5 1.5 v gs -- qg v ds = --10v i d = --1.5a it04051 3 - -0.1 357 - -1.0 23 57 23 5 100 7 5 3 2 10 7 5 v dd = --10v v gs = --4v t d (on) t d (off) t r t f sw time -- i d 0--1--2- -3 --4 --5 --6 200 100 300 400 500 600 0 -- 7 -- 8 -- 9 - -10 ta=25 c it02656 i d = --0.4a - -0.8a r ds (on) -- ta it02657 i d = --0.4a, v gs = --2.5v i d = --0.8a, v gs = --4.0v - -60 0 100 200 300 400 500 - -40 --20 0 20 40 60 80 100 120 140 160 static drain-to-source on-state resistance, r ds (on) -- m ? ambient temperature, ta -- c gate-to-source voltage, v gs -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m ? a s o drain-to-source voltage, v ds -- v drain current, i d -- a 100ms dc operation (t a=25 c) 1ms i dp = --6.0a 2 3 5 7 2 3 5 7 2 3 5 7 - -10 - -1.0 - -0.1 - -0.01 23 57 2 2 335 57 725 3 - -0.01 - -0.1 --10 - -1.0 it12454 pw 10 s i d = --1.5a operation in this area is limited by r ds (on). 100 s 10ms ta=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit
CPH6621 no. a0847-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps note on usage : since the CPH6621 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. it12455 ambient temperature, ta -- c allowable power dissipation, p d -- w p d -- ta 0 0 20 40 60 80 100 120 0.2 0.4 0.6 0.8 0.9 1.0 1.2 1.4 140 160 mounted on a ceramic board(900mm 2 ? 0.8mm)1unit to tal dissipation 1unit this catalog provides information as of june, 2007. specifications and information herein are subject to change without notice.
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